Product Description
STW12NK90Z is produced with SuperMESHTM Power MOSFET technology, which is derived from a highly optimized version of ST's well-known strip-based PowerMESHTM layout. It is available in the TO-247-3 package and can be used in switching applications, according to the STW12NK90Z datasheet. In addition to lowering on-resistance, special attention is paid to ensuring excellent dv/dt capability for the most demanding applications. ST's comprehensive portfolio of high voltage MOSFETs, including the groundbreaking MDmeshTM devices, is complemented by this series.
Product Features
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitance
Extremely high dv/dt capability
Very good manufacturing repeatability
Product Applications
Switching applications
Product Description
Type | Description |
|---|---|
ANSC PART# | ANSC - STW12NK90Z |
Category | Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
Mfr | - |
Series | SuperMESH™ |
Packaging | Tube |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 900 V |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 880mOhm @ 5.5A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 152 nC @ 10 V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 3500 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 230W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247-3 |
Package / Case | TO-247-3 |
Base Product Number | STW12 |
Actual image of the product
Product datasheet
For more information, please download
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Official Certificate&Certificate
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