Product Details
| Brief Description: The MRF6VP3450HR6 is a N-Channel LDMOS (Dual) RF MOSFET transistor . It is designed for enhancement mode operation and has a peak output power of 90W. Features: Frequency: 860MHz Gain: 22.5dB Power Output: 90W Operating Temperature: -40°C to 225°C Voltage Rated: 110V Current - Test: 1.4A Transistor Type: LDMOS (Dual) FET Technology: Metal-Oxide Semiconductor Configuration: Single Case Connection: SOURCE Terminal Form: FLAT Surface Mount: YES Application Grade: The MRF6VP3450HR6 is designed for high-power amplifier applications, specifically for use in RF systems operating at 860MHz. Applications: * RF amplifiers * Power amplifiers * Wireless communication systems * Radar systems * Satellite communication systems Additional Information: * The part is obsolete and not qualified. * It is ROHS3 compliant and has a factory lead time of 10 weeks. * The packaging is tape and reel (TR) with a package/case of NI-1230. * The transistor element material is silicon. |
Product Description
| Type# | Description |
| PART# | MRF6VP3450HR6 |
| Manufacturer | / |
| Package Description | ROHS COMPLIANT, CASE 375D-05, NI-1230, 4 PIN |
| Pin Count | 4 |
| Manufacturer Package | CASE 375D-05 |
| Case Connection | SOURCE |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min | 110 V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND |
| JESD-30 Code | R-CDFM-F4 |
| Number of Elements | 1 |
| Number of Terminals | 4 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 225 °C |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Form | FLAT |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
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