Product Details
| Brief Description: The FQD3N60CTM-WS is an N-Channel MOSFET , designed for switching applications. It features a high breakdown voltage of 600V and a continuous drain current of 2.4A. Features: High breakdown voltage: 600V Continuous drain current: 2.4A Power dissipation: 50W Operating temperature: -55°C to 150°C Gate to source voltage: ±30V Drive voltage: 10V Rise time: 30ns Fall time: 35ns Turn on delay time: 12ns Turn off delay time: 35ns Gate charge: 14nC Input capacitance: 565pF Rds(on) max: 3.4Ω @ 1.2A, 10V Application Grade: The FQD3N60CTM-WS is designed for high-power switching applications, such as motor control, power supplies, and lighting systems. Applications: Motor control Power supplies Lighting systems Switching applications High-power switching circuits Overall, the FQD3N60CTM-WS is a high-performance N-Channel MOSFET suitable for a wide range of applications requiring high power and reliability. |
Product Description
| Type | Description |
| ANSC PART# | ANSC - FQD3N60CTM-WS |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| Single FETs, MOSFETs | |
| Mfr | Original |
| Series | QFET® |
| Packaging | Tape & Reel (TR) |
| Cut Tape (CT) | |
| / | |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 3.4Ohm @ 1.2A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 565 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Base Product Number | FQD3N60 |
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