Product Description
The NDT452AP is a P-channel logic level enhancement mode Field-Effect Transistor using high cell density and DMOS technology. This very high-density process has been specially tailored to minimize on-state resistance and provide superior switching performance. The onsemi NDT452AP is particularly suited for low voltage applications such as notebook computer power management and DC motor control.
Product Features
-RDS(ON) = 0.065 Ω @ VGS = -10V
-RDS(ON) = 0.1 Ω @ VGS = -4.5V
High-density cell design for extremely low RDS(ON)
High power and current handling capability in a widely used surface mount package
Gate Source Voltage: +20v
Operating and Storage Temperature Range: -65 to 150°C
Product Applications
Notebook computer power management
DC motor control
Motor Drive & Control
Computer
Computer Peripherals
Product Description
Type | Description |
|---|---|
ANSC PART# | ANSC - NDT452AP |
Category | Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
Mfr | Original |
Series | - |
Packaging | Tape & Reel (TR) Cut Tape (CT) |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30 V |
Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 65mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id | 2.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 690 pF @ 15 V |
FET Feature | - |
Power Dissipation (Max) | 3W (Ta) |
Operating Temperature | -65°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-223-4 |
Package / Case | TO-261-4, TO-261AA |
Base Product Number | NDT452 |
Actual image of the product
Product datasheet
For more information, please download
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Official Certificate&Certificate
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