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Hot sale Original STP12NM50 MOSFET N-CH 500V 12A TO220AB N-Channel 500 V 12A (Tc) 160W (Tc) Through Hole

STP12NM50

Model:STP12NM50

Manufacturer:Original

Package:TO-220

详情

Product Details


Description
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
General features
■ High dv/dt and avalanche capabilities
■ Low input capacitance and gate charge
■ 100 avalanche tested
■ Low gate input resistance
■ Tight process control and high manufacturing yields
Applications
■ Switching application


Product Description


TypeDescription
ANSC PART#ANSC-STP12NM50
CategoryDiscrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
MfrOriginal
SeriesMDmesh™
PackagingTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500 V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs350mOhm @ 6A, 10V
Vgs(th) (Max) @ Id5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs39 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1000 pF @ 25 V
FET Feature-
Power Dissipation (Max)160W (Tc)
Operating Temperature-65°C ~ 150°C (TJ)
Grade-
Qualification-
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3
Base Product NumberSTP12


Actual image of the product 

STP12NM50

Product datasheet 

For more information, please download

   

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详情8

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