Product Descriptions
This P−Channel 1.8 V specified MOSFET is a rugged gate version of onsemi’s advanced POWERTRENCH process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8 V–8 V).
Products Features
• –13.5 A, –20 V
♦ RDS(on) = 8.5 mΩ @ VGS = –4.5 V
♦ RDS(on) = 10.5 mΩ @ VGS = –2.5 V
♦ RDS(on) = 14 mΩ @ VGS = –1.8 V
• Fast Switching Speed
• High Performance Trench Technology for Extremely Low RDS(on)
• High Current and Power Handling Capability
Products Applications
• Power Management
• Load Switch
• Battery Protection
Specifications
| Attribute | Attribute value |
| ANSM-Model | FDS4465 |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| Single FETs, MOSFETs | |
| Mfr | onsemi |
| Series | PowerTrench® |
| Packaging | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Digi-Reel® | |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 13.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 13.5A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 4.5 V |
| Vgs (Max) | 卤8V |
| Input Capacitance (Ciss) (Max) @ Vds | 8237 pF @ 10 V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Base Product Number | FDS44 |
Actual product photos
Payment&Transportation
Official Certificate&Certificate
Multiple product supply
Company office environment
Warehouse Real Shot
Standard packaging
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