| Part# | NCE01P30L |
| Type： | high-voltage P-channel IGBT field-effect transistor |
| Manufactor | / |
| DC | NEW |
| Describe | TO-251S |
| Supplier Device Packaging | TUBE |
| Technology | Trench |
| Polarity | P |
| BVDSS(V) | -100 |
| ID(A) | -30 |
| VTH(V) | -1.9 |
| RDS(ON)@10VTyp(mΩ) | 44 |
| RDS(ON)@4.5VTyp(mΩ) | 48 |
| QG(nC) | 136 |
| PD(W) | 120 |
| PKG | / |
