Original high-voltage N-channel IGBT field-effect transistor NCE60R1K2D TO263_集成电路2_深圳奥米芯电子有限公司

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Original high-voltage N-channel IGBT field-effect transistor NCE60R1K2D TO263

NCE60R1K2D

Model:NCE60R1K2D

Manufacturer:/

Package:TO263

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详情

Part#	NCE60R1K2D
Type：	high-voltage N-channel IGBT field-effect transistor
Manufactor	/
DC	NEW
Describe	TO263
Supplier Device Packaging	REEL

TO263

NCE60R1K2D

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