| Part# | NCE0117I |
| Type： | High-voltage N-channel IGBT field-effect transistors |
| Manufactor | / |
| DC | NEW |
| Describe | TO251 |
| Supplier Device Packaging | TUBE |
| Technology | Trench |
| Polarity | N |
| BVDSS(V) | 100 |
| ID(A) | 17 |
| VTH(V) | 1.5 |
| RDS(ON)@10VTyp(mΩ) | 56 |
| RDS(ON)@4.5VTyp(mΩ) | 65 |
| QG(nC) | 30 |
| PD(W) | 55 |
Product Data Book: NCE0117I
