| NCE30NP4030G | NCE55P15I |
| Type： | High-voltage P-channel IGBT field-effect transistor |
| Manufactor | NCE |
| DC | NEW |
| Describe | TO-252 |
| Supplier Device Packaging | REEL |
| Technology | Trench |
| Polarity | P |
| BVDSS(V) | -55 |
| ID(A) | -12 |
| VTH(V) | -2.6 |
| RDS(ON)@10VTyp(mΩ) | 60 |
| QG(nC) | 26 |
Product Data Book：NCE55P15I
