| NCE30NP4030G | NCE65T540I |
| Type： | High-voltage N-channel IGBT field-effect transistor |
| Manufactor | NCE |
| DC | NEW |
| Describe | TO-251 |
| Supplier Device Packaging | TUBE |
| Technology | SJ-Ⅲ |
| Polarity | N |
| BVDSS(V) | 650 |
| ID(A) | 8 |
| VTH(V) | 3.5 |
| RDS(ON)@10VTyp(mΩ) | 460 |
| QG(nC) | 14.6 |
| PD(W) | 69 |
Product Data Book：NCE65T540I
