| NCE30NP4030G | NCE6080D |
| Type： | High-voltage N-channel IGBT field-effect transistor |
| Manufactor | / |
| DC | NEW |
| Describe | TO-263 |
| Supplier Device Packaging | TUBE |
| Technology | Trench |
| Polarity | N |
| BVDSS(V) | 60 |
| ID(A) | 80 |
| VTH(V) | 2.8 |
| RDS(ON)@10VTyp(mΩ) | 6 |
| QG(nC) | 90 |
| PD(W) | 110 |
| PKG | / |
