| Part# | NCE30TD60BD |
| Type： | High-voltage N-channel IGBT field-effect transistor |
| Manufactor | / |
| DC | NEW |
| Describe | TO-263 |
| Supplier Device Packaging | TUBE |
| V(BR)CES (V) | 600 |
| IC(A)100℃ | 30 |
| PD(W)25℃ | 176 |
| VGE(V) | ±30 |
| VTH(V)Typ | 5 |
| VCE(sat)(V)@VGE=15V, 25℃Typ | 1.7 |
| VCE(sat)(V)@VGE=15V, 25℃Max | 1.9 |
| Switching Frequency | 0~60KHz |
| Tsc(us) | 5 |
| PKG | / |
