| Part# | NCEP026N10D |
| Type： | High-voltage N-channel IGBT field-effect transistor |
| Manufactor | / |
| DC | NEW |
| Describe | TO-263 |
| Supplier Device Packaging | TUBE |
| Technology | SGT-II |
| Polarity | N |
| BVDSS(V) | 100 |
| ID(A) | 200 |
| VTH(V) | 3 |
| RDS(ON)@10VTyp(mΩ) | 2.2 |
| QG(nC) | 240 |
| PD(W) | 300 |
| PKG | / |
