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Hot selling product original stock DS35M2GA-IW 3.3V/1.8V x1/x2/x4 2G-bit SPI NAND FLASH IC CHIP KGD

DS35M2GA-IW

Model:DS35M2GA-IW

Manufacturer:Dosilicon

Package:KGD

详情

Product Descriptions


DS35X2GAXXX is a 256Mx8bit with spare 8Mx8 bit capacity. 

The device is offered in 3.3/1.8 Vcc Power Supply, and with SPI interface.

The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased.The device contains 2048 blocks, composed by 64 pages consisting in two NAND structures of 32 series connected Flash cells. Program operation allows the 2112-byte page writing in typical 300us and an erase operation can be performed in typical 2 ms on a 128K-byte block. Data in the page can be read out at 10ns cycle time per word. The on-chip Program/Erase Controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data.


An internal 4-bit ECC logic is implemented in the chip, which is enabled by default. The internal ECC can be disabled or enabled again by command. When the internal 4-bit ECC logic is disabled, the host side needs to handle the 4-bit ECC by host micro controller.


The serial peripheral interface (SPI) provides NAND Flash with a cost-effective non-volatile memory storage solution in systems where pin count must be kept to a minimum. It is also an alternative to SPI-NOR, offering 

superior write performance and cost per bit over SPI-NOR.


Product Features


■ Serial Peripheral Interface

- Mode 0 and Mode 3

■ Standard, Dual, Quad SPI

- Standard SPI: SCLK, CS#, SI, SO 

- Dual SPI: SCLK, CS#, SIO0, SIO1

- Quad SPI: SCLK, CS#, SIO0, SIO1, SIO2, SIO3

■ SUPPLY VOLTAGE

- VCC = 1.8/3.3 Volt core supply voltage for 

Program, Erase and Read operations

■ PAGE READ / PROGRAM

- (2048+64 spare) byte

- Random access: 25us (w/o ECC), 90us(w/ ECC)

- Serial access: 104MHz (1.8V/3.3V)

- Page program time: 300us (Typ)

■ FAST BLOCK ERASE

- Block size: (128K + 4K) bytes 

- Block erase time: 2ms (Typ)

■ MEMORY CELL ARRAY

- (2K + 64) bytes x 64 pages x 2048 blocks

■ ELECTRONIC SIGNATURE

- Manufacturer Code

- Device Code

■ STATUS REGISTER

■ HARDWARE DATA PROTECTION

- Enable/Disable protection with WP# Pin

- Top or Bottom, Block selection combination

■ DATA RETENTION

- Max cycling: 100K Program / Erase cycles

- Data retention: 10 Years (4bit/512byte ECC)

- Internal ECC can be enabled (4bit ECC)

- Block zero is a valid block and will be valid for at 

least 1K program-erase cycles with ECC


  Specifications


AttributeAttribute value
ANSM-Part#ANSM-DS35M2GA-IW
Type:SPI NAND
ManufactorDosilicon
DCStandard
DescribeNEW
Supplier Device PackagingKGD
Package/
Density2Gb
Voltage (V)1.8
Speed (MHz/CLK)104MHz
Temp.Range-40℃~85℃


Actual product photos



Product Data Book:




For more product information, please download the PDF


Payment&Transportation


详情8.1


Official Certificate&Certificate



详情页3.1



Multiple product supply



详情5.1


Company office environment


详情6.1


Warehouse Real Shot


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Standard packaging


详情9


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