Product Structure
• Epitaxial planar type
• PNP silicon transistor
Product Features
1) Low VCE(sat).
VCE(sat) = −0.35V (Typ.)
(IC/IB = −4A / −0.1A)
2) Excellent DC current gain characteristics.
3) Complements the 2SD2098 / 2SD2118 /
2SD2097.
Specifications
| Attribute | Attribute value |
| ANSM-Part# | ANSM-2SB1386T100Q |
| Category | Discrete Semiconductor Products |
| Transistors | |
| Bipolar (BJT) | |
| Single Bipolar Transistors | |
| Mfr | / |
| Series | - |
| Package | Tape & Reel (TR) |
| Cut Tape (CT) | |
| / | |
| Product Status | Not For New Designs |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100mA, 4A |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA, 2V |
| Power - Max | 2 W |
| Frequency - Transition | 120MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Supplier Device Package | MPT3 |
| Base Product Number | 2SB1386 |
Actual product photos
Payment&Transportation
Official Certificate&Certificate
Multiple product supply
Company office environment
Warehouse Real Shot
Standard packaging
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