Hi,欢迎
+86 135 5637 6665 +852 2632 9637 6*12小时在线电话
图片仅供参考

Hot sale Original JAN2N2906A Transistor TRANS PNP 60V 0.6A Bipolar (BJT) Transistor PNP 60 V 600 mA 500 mW Through Hole TO-18

JAN2N2906A

Model:JAN2N2906A

Manufacturer:Original

Package:TO-18

详情

Product Details


Brief Description: The JAN2N2906A is a military-grade, PNP bipolar junction transistor (BJT) manufactured. It is designed for use in high-reliability applications and features a high collector-emitter breakdown voltage of 60V.

Features:

  • High collector-emitter breakdown voltage: 60V

  • High collector current: 600mA

  • High power dissipation: 500mW

  • High operating temperature range: -65°C to 200°C

  • Low leakage current: 50nA

  • High DC current gain: 40 at 150mA and 10V

  • PNP transistor type

  • Through-hole mounting

  • Non-RoHS compliant

Application Grade: The JAN2N2906A is designed for use in high-reliability applications, such as military, aerospace, and industrial systems, where high voltage, high current, and high temperature operation are required.

Applications:

  • High-voltage power switching and control

  • High-current power amplification

  • High-temperature and high-reliability applications

  • Military and aerospace systems

  • Industrial control and automation systems

  • Power supplies and converters

  • Motor control and drive systems

Overall, the JAN2N2906A is a high-performance, high-reliability PNP BJT designed for use in demanding applications where high voltage, high current, and high temperature operation are required. Its military-grade design and high-performance features make it an ideal choice for applications in the military, aerospace, and industrial sectors.


Product Description

Type

Description

ANSC PART#

ANSC - JAN2N2906A

Category

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Single Bipolar Transistors

Mfr

Original

Series

-

Packaging

Bulk

Part Status

Active

Transistor Type

PNP

Current - Collector (Ic) (Max)

600 mA

Voltage - Collector Emitter Breakdown (Max)

60 V

Vce Saturation (Max) @ Ib, Ic

1.6V @ 50mA, 500mA

Current - Collector Cutoff (Max)

50nA

DC Current Gain (hFE) (Min) @ Ic, Vce

40 @ 150mA, 10V

Power - Max

500 mW

Frequency - Transition

-

Operating Temperature

-65°C ~ 200°C (TJ)

Grade

Military

Qualification

MIL-PRF-19500/291

Mounting Type

Through Hole

Package / Case

TO-206AA, TO-18-3 Metal Can

Supplier Device Package

TO-18

Base Product Number

2N2906

  Actual image of the product                

JAN2N2906A

Product datasheet 

For more information, please download

 

 

Payment&Transportation

详情8

Official Certificate&Certificate

2

Standard packaging

关于包装

Multiple product supply

关于产品

Welcome to visit our company

公司

Warehouse Real Shot

仓库

Hot Selling Product Recommendation


Modelbrandquantitypackage
BZX384-C5V1NXP6000SOD323
SN74LVC1G123DCURTI2500VSSOP8
V33MLA1206HLittelfuse1000SMD1206
FDS8958AFAIRCHILD900SOP8
MC2904DR2GON775SOP-8
ICL3232IVZINTERSIL152TSSOP16
IAM-82008-TR1AGILENT150SOP8
NJM2882F03JRC100SOT23-5
LP2988AIMX-3.0NSC22500SOP8
TUSB522PRGERTI52000QFN
NJM3717FM2JRC10500PLCC28
OPA4322AIPWRTI8500TSSOP14
AT45DB321D-SUATMEL4900SOP8
FDS8958AFAIRCHILD3888SOP8
DS2502P-500DALLAS3575SON-6
PCA9500PWNXP2500TSSOP16
20645-040T-01I-PEX1926CONN
SUD50P04-09L-E3VISHAY1670TO-252
TL1431CPWRTI1344TSSOP8
PSMN3R0-30YLDNXP980SOT669
SG-615L14.7456MHZEpson945CRYSTAL OSCILLATOR
IRF7311TRPBFIR942SOP-8
MIC4827YMMMICREL860MSOP-8
S9S08RNA16MFREESCALE759QFP32
AD9884AKS-100ADI330QFP
ST4SI2M0020TPIFWST122DFN
MIC2505-2YMMICROCHIP3525SOP8
SSM3J351R,LXGFTOSHIBA12000SOT23
PBY160808T-601Y-NCHILISIN8000SMD
R820TRAFAEL200QFN-24
SN74HCT573DWRTI386SOP
NVTFS5116PLTAGON90WDFN-8
ATXMEGA32A4U-ANRMICROCHIP82000QFP44
PIC16F18425-I/STMICROCHIP5260TSSOP14
80HCPS1848CRMIIDT119BGA
BCM85110IFSBGBROADCOM100BGA
WG82574IT S LBACINTEL78QFN64
XC7VX1140T-1FLG1930IXILINX60BGA
LMH0384SQE/NOPBTI24WQFN-16
XCVU19P-2FSVB3824EXILINX10BGA


用户信息:
电话号码
中国大陆+86
  • 中国大陆+86
  • 中国台湾+886
  • 中国香港+852
公司名称
邮箱
产品型号
产品数量
备注留言