Product Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 830 mJ.There is a peak drain current of 28 A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 800 V, it should remain above the 800 V level.
Product Features
the avalanche energy rating (Eas) is 830 mJ
based on its rated peak drain current 28 A.
Product Applications
IRFAE50 applications of single MOSFETs transistors.
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DC/DC converters
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Power Tools
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Motor Drives and Uninterruptible Power Supples
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Synchronous Rectification
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Battery Protection Circuit
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Telecom 1 Sever Power Supplies
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Industrial Power Supplies
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PFC stages, hard switching PWM stages and resonant switching
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PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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Lighting, Server, Telecom and UPS.
Product Description
| Type# | Description |
| ANSC PART# | ANSC- IRFAE50 |
| Ihs Manufacturer | Original |
| Package Description | TO-3, 2 PIN |
| Avalanche Energy Rating (Eas) | 830 mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 800 V |
| Drain Current-Max (ID) | 7.1 A |
| Drain-source On Resistance-Max |
1.4 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max |
150 °C |
| Package Body Material | METAL |
| Package Shape | ROUND |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 150 W |
| Pulsed Drain Current-Max (IDM) | 28 A |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Terminal Form | PIN/PEG |
| Terminal Position | BOTTOM |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
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Product datasheet
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