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Hot sale original BSM50GB120DN2 Insulated Gate Bipolar Transistor 50A I(C) 1200V V(BR)CES N-Channel MODULE-7

BSM50GB120DN2

Model:BSM50GB120DN2

Manufacturer:/

Package:MODULE

详情

Product Details


• Half-bridge

• Including fast free-wheeling diodes

• Package with insulated metal base plate


Product Description


Type#Description
ANSC PART#ANSC - BSM50GB120DN2
Part Package CodeMODULE
Package DescriptionMODULE-7
Pin Count7
Samacsys Manufacturer/
Case ConnectionISOLATED
Collector Current-Max (IC)78 A
Collector-Emitter Voltage-Max1200 V
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max20 V
JESD-30 CodeR-XUFM-X7
Number of Elements2
Number of Terminals7
Operating Temperature-Max150 °C
Package Body MaterialUNSPECIFIED
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Peak Reflow Temperature (Cel)NOT SPECIFIED
Polarity/Channel TypeN-CHANNEL
Power Dissipation-Max (Abs)400 W
Qualification StatusNot Qualified
Surface MountNO
Terminal FormUNSPECIFIED
Terminal PositionUPPER
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
Transistor Element MaterialSILICON
Turn-off Time-Nom (toff)450 ns
Turn-on Time-Nom (ton)100 ns
VCEsat-Max3.2 V

Actual image of the product 


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