Product Details
Brief Description: The 2N5430 is a NPN bipolar junction transistor (BJT) .
It is a through-hole mounted device with a TO-66 package and a maximum power
dissipation of 40W.
Product Features
Collector-emitter voltage (VCEO): 100V
DC current gain-min (hFE): 60
Maximum collector current: 7A
Maximum power dissipation: 40W
Through-hole mounting
TO-66 package
NPN polarity/channel type
Silicon transistor element material
Non-RoHS compliant
Application Grade: The 2N5430 is a general-purpose transistor suitable for a wide
range of applications, including audio amplifiers, power supplies, and motor control.
Product Applications
Audio amplifiers
Power supplies
Motor control
General-purpose switching and amplification
Key Information:
Collector-emitter voltage (VCEO): 100V
DC current gain-min (hFE): 60
Maximum collector current: 7A
Maximum power dissipation: 40W
Through-hole mounting
TO-66 package
NPN polarity/channel type
Silicon transistor element material
Non-RoHS compliant
Overall, the 2N5430 is a robust and reliable transistor suitable for a variety of applications, including audio amplifiers, power supplies, and motor control. Its high power dissipation and collector current make it an excellent choice for high-power applications.
Product Description
Type | Description |
|---|---|
Category | Discrete Semiconductor Products Transistors Bipolar (BJT) Single Bipolar Transistors |
Mfr | / |
Series | * |
Packaging | Bulk |
Part Status | Active |
Base Product Number | 2N5430 |
Actual image of the product
