Product Details
DESCRIPTION
This hermetically packaged QPL product features the latest advanced MOSFET technology. It is ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
FEATURES
• Low RDS(on)
• Ease of Paralleling
• Qualified to MIL-PRF-19500/557
Product Description
|
Type |
Description |
|---|---|
| ANSC PART# | ANSC - 2N6796 |
|
Category |
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
|
Mfr |
- |
|
Series |
- |
|
Packaging |
Bulk |
|
Part Status |
Obsolete |
|
FET Type |
N-Channel |
|
Technology |
MOSFET (Metal Oxide) |
|
Drain to Source Voltage (Vdss) |
100 V |
|
Current - Continuous Drain (Id) @ 25°C |
8A (Tc) |
|
Drive Voltage (Max Rds On, Min Rds On) |
10V |
|
Rds On (Max) @ Id, Vgs |
180mOhm @ 5A, 10V |
|
Vgs(th) (Max) @ Id |
4V @ 250mA |
|
Gate Charge (Qg) (Max) @ Vgs |
6.34 nC @ 10 V |
|
Vgs (Max) |
±20V |
|
FET Feature |
- |
|
Power Dissipation (Max) |
800mW (Ta), 25W (Tc) |
|
Operating Temperature |
-55°C ~ 150°C (TJ) |
|
Grade |
- |
|
Qualification |
- |
|
Mounting Type |
Through Hole |
|
Supplier Device Package |
TO-39 |
|
Package / Case |
TO-205AF Metal Can |
Actual image of the product
