Product Details
Brief Description: The JANTX2N3019S is a military-grade, NPN bipolar junction transistor (BJT).
It is designed for switching applications and features a TO-205AD, TO-39-3 metal can package.
Features:
Collector Base Voltage (VCBO): 140V
Collector-Emitter Breakdown Voltage: 80V
Collector Emitter Voltage (VCEO): 80V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Max Collector Current: 1A
Max Power Dissipation: 800mW
Operating Temperature: -65°C to 200°C (TJ)
Package / Case: TO-205AD, TO-39-3 Metal Can
Polarity/Channel Type: NPN
Transistor Application: Switching
Transistor Element Material: Silicon
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Application Grade: Military-grade, MIL-PRF-19500/391
Applications: The JANTX2N3019S is suitable for a wide range of switching applications, including:
Military and aerospace systems
Industrial control systems
Automotive systems
Medical devices
Power supplies
This transistor is designed to operate in harsh environments and is suitable for applications requiring high reliability and performance. Its military-grade certification and high power dissipation make it an excellent choice for demanding applications.
Product Description
| Type# | Description |
| ANSC PART# | ANSC -JANTX2N3019S |
| Manufacturer | / |
| Part Package | TO-39 |
| Package Description | HERMETIC SEALED, METAL CAN-3 |
| Pin Count | 3 |
| Emitter-Base Voltage | 7(V) |
| Operating Temperature Classification | Military |
| Package Type | TO-39 |
| Transistor Polarity | NPN |
| Collector-Base Voltage | 140(V) |
| Category | Bipolar Power |
| Operating Temp Range | -65C to 200C |
| Collector Current (DC) | 1(A) |
| Number of Elements | 1 |
| Rad Hardened | No |
| Collector-Emitter Voltage | 80(V) |
| DC Current Gain | 50 |
| Mounting | Through Hole |
| Pin Count | 3 |
| Configuration | Single |
| Power Dissipation | 0.8(W) |
| Output Power | Not Required(W) |
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