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Hot sale Original STW50N65DM2AG Transistors MOSFET N-CH 650V 28A TO247 N-Channel 650 V 28A (Tc) 300W (Tc) Through Hole

STW50N65DM2AG

Model:STW50N65DM2AG

Manufacturer:Original

Package:TO247

详情

Product Details


Brief Description: The STW50N65DM2AG is an N-Channel MOSFET , designed for high-power applications. It features a TO-247-3 package and is suitable for through-hole mounting.

Features:

  • Continuous drain current (ID): 28A

  • Drain-to-source voltage (Vdss): 650V

  • Drive voltage (Max Rds On, Min Rds On): 10V

  • Gate charge (Qg) (Max) @ Vgs: 70nC @ 10V

  • Input capacitance (Ciss) (Max) @ Vds: 3200pF @ 100V

  • Rds On (Max) @ Id, Vgs: 87mΩ @ 19A, 10V

  • Operating temperature: -55°C to 150°C TJ

  • Power dissipation (Max): 300W Tc

  • Vgs (Max): ±25V

  • Vgs(th) (Max) @ Id: 5V @ 250μA

Application Grade: The STW50N65DM2AG is designed for high-power applications, such as:

  • Automotive systems

  • Industrial control systems

  • Power supplies

  • Motor control systems

Applications:

  • High-power switching applications

  • High-voltage power supplies

  • Motor control systems

  • Automotive systems, including engine management and transmission control

  • Industrial control systems, including process control and automation

This MOSFET is suitable for applications requiring high power, high voltage, and high current handling capabilities. Its TO-247-3 package and through-hole mounting make it easy to integrate into various systems.


Product Description

Type#Description
ANSC PART#ANSC-STW50N65DM2AG
CategoryDiscrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Mfr/
SeriesMDmesh™ DM2
PackagingTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs87mOhm @ 19A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs70 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds3200 pF @ 100 V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
GradeAutomotive
QualificationAEC-Q101
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3
Package / CaseTO-247-3
Base Product NumberSTW50


Actual image of the product 

STW50N65DM2AG

Product datasheet 

For more information, please download

 

 

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