Product Details
Description
UniFET™ MOSFET is high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Features
• RDS(on) = 70 m (Typ.) @ VGS = 10 V, ID = 19 A
• Low Gate Charge (Typ. 60 nC)
• Low Crss (Typ. 60 pF)
• 100% Avalanche Tested
• ESD Improved Capability
• RoHS Compliant
Applications
• PDP TV
• Uninterruptible Power Supply
• AC-DC Power Supply
Product Description
| Type# | Description |
| PART# | FQA38N30 |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| Single FETs, MOSFETs | |
| Mfr | / |
| Series | QFET® |
| Packaging | Tube |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 300 V |
| Current - Continuous Drain (Id) @ 25°C | 38.4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 19.2A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 4400 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 290W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3P |
| Package / Case | TO-3P-3, SC-65-3 |
| Base Product Number | FQA3 |
Actual image of the product
