Product Details
High Voltage MOSFET
N-Channel Enhancement Mode Avalanche Energy Rated
Features
• International standard packages
• High voltage, Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Fast switching times
Applications
• Switch-mode and resonant-mode power supplies
• Flyback inverters
• DC choppers
• High frequency matching
Advantages
• Space savings
• High power density
Product Description
| TYPE | DESCRIPTION |
| ANSC PART# | ANSC- IXTA130N10T |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| Single FETs, MOSFETs | |
| Mfr | Original |
| Series | Trench |
| Packaging | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 130A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 9.1mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 104 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 5080 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263AA |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Base Product Number | IXTA130 |
Product Photos
Product datasheet
For more information, please download
Payment&Transportation
Official Certificate&Certificate
Standard packaging
Multiple product supply
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