Product Details
| Product Description: The FDL100N50F is a high-performance, N-channel enhancement-mode power MOSFET designed for switching applications. This UniFET? series device features a silicon-based transistor element with a maximum threshold voltage of 3V and a maximum gate-source voltage of ±30V. The FDL100N50F is packaged in a TO-264-3, TO-264AA tube and is RoHS3 compliant. Features: High current handling: 100A continuous drain current at 25°C Low on-resistance: 0.055Ω (max) at 10V High power dissipation: 2500W (max) at 25°C Fast switching times: 63ns turn-on delay time and 202ns turn-off delay time High avalanche energy rating: 5000mJ Operating temperature range: -55°C to 150°C Applications: Primary applications: High-power switching circuits Power supplies Motor control systems Secondary applications: Audio amplifiers Lighting control systems Industrial automation systems |
Product Description
| Type | Description |
| ANSC PART# | ANSC - FDL100N50F |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| Single FETs, MOSFETs | |
| Mfr | Original |
| Series | UniFET™ |
| Packaging | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500 V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 238 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 12000 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 2500W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-264-3 |
| Package / Case | TO-264-3, TO-264AA |
| Base Product Number | FDL100 |
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