Hot sale Original FDN306P Transistor FETs MOSFETs P-Channel 12 V 2.6A (Ta) 500mW (Ta) Surface Mount SOT-23-3_电子元器件

Product Details

General Description

This P-Channel 1.8V specified MOSFET uses advanced low voltage PowerTrench process.

It has been optimized for battery power management applications.

Features

• –2.6 A, –12 V. RDS(ON) = 40 mΩ @ VGS = –4.5 V RDS(ON) = 50 mΩ @ VGS = –2.5 V RDS(ON) = 80 mΩ @ VGS = –1.8 V

• Fast switching speed

• High performance trench technology for extremely low RDS(ON)

• SuperSOT™ -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint

Applications

• Battery management

• Load switch

• Battery protection

Product Description

Type	Description
ANSC PART#	ANSC - FDN306P
Category	Discrete Semiconductor Products
	Transistors
	FETs, MOSFETs
	Single FETs, MOSFETs
Mfr	Original
Series	PowerTrench®
Packaging	Tape & Reel (TR)
	Cut Tape (CT)
	/
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12 V
Current - Continuous Drain (Id) @ 25掳C	2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	40mOhm @ 2.6A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17 nC @ 4.5 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	1138 pF @ 6 V
FET Feature	-
Power Dissipation (Max)	500mW (Ta)
Operating Temperature	-55°C ~ 155°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3
Package / Case	TO-236-3, SC-59, SOT-23-3
Base Product Number	FDN306

FDN306P

For more information, please download

FDN306P

FDN306P 2

FDN306P 3

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