Product Details
| FQP12P20 Description A patented planar stripe and DMOS technology are used to create the FQP12P20 P-Channel enhancement mode power MOSFET. This sophisticated MOSFET technology has been specifically developed to lower on-state resistance, improve switching performance, and increase avalanche energy strength. FQP12P20 can be used in applications such as switched-mode power supply, audio amplifiers, DC motor control, and variable switching power. FQP12P20 Features RoHS Compliant Low Crss ( Typ. 30pF) 100% avalanche tested Low gate charge ( Typ. 31nC) -11.5A, -200V, RDS(on) = 470mΩ(Max.) @VGS = -10 V, ID = -5.75A FQP12P20 Applications Audio amplifier DC motor control Other audio & video Switched-mode power supplies Variable switching power applications |
Product Description
| Type | Description |
| ANSC PART# | ANSC - FQP12P20 |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| Single FETs, MOSFETs | |
| Mfr | Original |
| Series | QFET® |
| Packaging | Tube |
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 11.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 470mOhm @ 5.75A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 120W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
| Package / Case | TO-220-3 |
| Base Product Number | FQP12 |
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