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Hot sale Original SI3459BDV-T1-GE3 Transistor MOSFET P-CH 60V 2.9A P-Channel 60 V 2.9A (Tc) 2W (Ta) 3.3W (Tc) Surface Mount

SI3459BDV-T1-GE3

Model:SI3459BDV-T1-GE3

Manufacturer:Original

Package:SOT23-6

详情

Product Overview

With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 350pF @ 30V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of -2.2A.0.0022A is the drain current of this device, which is the maximum continuous current transistor can carry.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 5 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.-3V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60V.

Product Features  

a continuous drain current (ID) of -2.2A

a threshold voltage of -3V
a 60V drain to source voltage (Vdss)

Product Applications

SI3459BDV-T1-GE3 applications of single MOSFETs transistors.


Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification


 

 Product Description 

 

Type

Description

ANSC PART#

ANSC - SI3459BDV-T1-GE3

Category

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

Mfr

Original

Series

TrenchFET®

Packaging

Tape & Reel (TR)

Cut Tape (CT)

Part Status

Active

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60 V

Current - Continuous Drain (Id) @ 25°C

2.9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

216mOhm @ 2.2A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

12 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

350 pF @ 30 V

FET Feature

-

Power Dissipation (Max)

2W (Ta), 3.3W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP

Package / Case

SOT-23-6 Thin, TSOT-23-6

Base Product Number

SI3459

 

  Actual image of the product                


Product datasheet 

For more information, please download

   


Payment&Transportation

详情8

Official Certificate&Certificate

2

Standard packaging

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