Product Details
| DESCRIPTION This family of 2N3506 through 2N3507A high-frequency, epitaxial planar transistors feature low saturation voltage. These devices are also available in TO-5 and low profile U4 packaging. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages. FEATURES • JEDEC registered 2N3506 through 2N3507A series. • RoHS compliant versions available (commercial grade only). • VCR(sat) = 0.5 V @ IC = 500 mA. • Rise time tr = 30 ns max @ IC = 1.5 A, IB1 = 150 mA. • Fall time tf = 35 ns max @ IC = 1.5 A, IB1 = IB2 = 150 mA. APPLICATIONS / BENEFITS • General purpose transistors for medium power applications requiring high frequency switching and low package profile. • Military and other high-reliability applications. |
Product Description
| Type | Description |
| ANSC PART# | ANSC-JAN2N3507 |
| Category | Discrete Semiconductor Products |
| Transistors | |
| Bipolar (BJT) | |
| Single Bipolar Transistors | |
| Mfr | Original |
| Series | - |
| Packaging | Bulk |
| Part Status | Active |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 250mA, 2.5A |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 1.5A, 2V |
| Power - Max | 1 W |
| Frequency - Transition | - |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Grade | Military |
| Qualification | MIL-PRF-19500/349 |
| Mounting Type | Through Hole |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Supplier Device Package | TO-39 (TO-205AD) |
| Base Product Number | 2N3507 |
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