Product Details
| Brief Description: The MJE210 is a single PNP bipolar junction transistor (BJT) manufactured. It is a through-hole packaged device with a TO-126-3 case and a maximum power dissipation of 1.5W. Features: Maximum current collector (Ic) of 5A Minimum DC current gain (hFE) of 45 at Ic = 2A and Vce = 1V Transition frequency of 65MHz Maximum voltage collector-emitter breakdown of 40V Maximum power dissipation of 1.5W Operating temperature range of -65°C to 150°C Application Grade: The MJE210 is an obsolete device and is not qualified for use in new designs. It is not RoHS compliant and is not compliant with Reach regulations. Applications: The MJE210 is suitable for use in amplifier applications, where its high current handling capability and high frequency performance make it an attractive choice. Its PNP configuration and high voltage breakdown make it suitable for use in applications where high voltage and current are required. However, its obsolescence and non-compliance with modern regulations make it less suitable for new designs. |
Product Description
| Type# | Description |
| PART# | MJE210 |
| Ihs Manufacturer | / |
| Part Package Code | TO-225 |
| Package Description | PLASTIC, CASE 77-09, 3 PIN |
| Pin Count | 3 |
| Manufacturer Package Code | Sep-77 |
| Samacsys Manufacturer | onsemi |
| Collector Current-Max (IC) | 5 A |
| Collector-Emitter Voltage-Max | 40 V |
| Configuration | SINGLE |
| DC Current Gain-Min (hFE) | 10 |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Temperature-Max | 150 °C |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | 235 |
| Polarity/Channel Type | PNP |
| Power Dissipation-Max (Abs) | 1.5 W |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
| Transition Frequency-Nom (fT) | 65 MHz |
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