Product Details
| FDPF10N60NZ Description N-channel UniFET? MOSFET FDPF10N60NZ belongs to the family of high-voltage MOSFET family provided based on the planar stripe and DMOS technology. It is specifically designed to provide lower on-state resistance, advanced switching performance, and higher avalanche energy strength. Due to its reliable performance, it is well suited for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballasts. FDPF10N60NZ Features Lower on-state resistance Better switching performance Higher avalanche energy strength Improved dv/dt capability Available in the TO-220F package FDPF10N60NZ Applications Lighting LCD/LED/PDP TV Uninterruptible power supply Power factor correction (PFC) Flat-panel display (FPD) TV power |
Product Description
| Type | Description |
| Part# | FDPF10N60NZ |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| Single FETs, MOSFETs | |
| Mfr | Original |
| Series | UniFET-II™ |
| Packaging | Tube |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 1475 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 38W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220F-3 |
| Package / Case | TO-220-3 Full Pack |
| Base Product Number | FDPF10 |
Actual image of the product
