Product Details
| MT46V64M4 – 16 MEG x 4 x 4 BANKS MT46V32M8 – 8 MEG x 8 x 4 BANKS MT46V16M16 – 4 MEG x 16 x 4 BANKS General Description The 256Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad bank DRAM. Features •VDD= +2.5V ±0.2V, VDDQ = +2.5V ±0.2V • Bidirectional data strobe (DQS) transmitted/received with data, i.e., source-synchronous data capture (x16 has two – one per byte) • Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle • Differential clock inputs (CK and CK#) • Commands entered on each positive CK edge • DQS edge-aligned with data for READs; center-aligned with data for WRITEs • DLL to align DQ and DQS transitions with CK • Four internal banks for concurrent operation • Data mask (DM) for masking write data (x16 has two – one per byte) • Programmable burst lengths: 2, 4, or 8 • Auto Refresh and Self Refresh Modes • Longer-lead TSOP for improved reliability (OCPL) • 2.5V I/O (SSTL_2 compatible) • Concurrent auto precharge option supported •tRAS lockout supported (tRAP =tRCD) |
Product Description
| Type# | Description |
| ANSC PART# | ANSC- MT46V16M16P-5B:K |
| PART# | MT46V16M16P-5B:K |
| Part Package Code | TSOP |
| Package Description | Tssop, Tssop66,.46 |
| Pin Count | 66 |
| Access Mode | Four Bank Page Burst |
| Access Time-Max | 0.7 Ns |
| Additional Feature | Auto/Self Refresh |
| Clock Frequency-Max (fCLK) | 200 Mhz |
| I/O Type | Common |
| Interleaved Burst Length | 2,4,8 |
| JESD-30 Code | R-PDSO-G66 |
| JESD-609 Code | e3 |
| Length | 22.22 Mm |
| Memory Density | 268435456 Bit |
| Memory IC Type | Ddr1 Dram |
| Memory Width | 16 |
| Moisture Sensitivity Level | 3 |
| Number of Functions | 1 |
| Number of Ports | 1 |
| Number of Terminals | 66 |
| Number of Words | 16777216 Words |
| Number of Words Code | 16000000 |
| Operating Mode | Synchronous |
| Operating Temperature-Max | 70 °C |
| Operating Temperature-Min | |
| Organization | 16mx16 |
| Output Characteristics | 3-State |
| Package Body Material | Plastic/Epoxy |
| Package Code | TSSOP |
| Package Equivalence Code | TSSOP66,.46 |
| Package Shape | Rectangular |
| Package Style | Small Outline, Thin Profile, Shrink Pitch |
| Peak Reflow Temperature (Cel) | 260 |
| Qualification Status | Not Qualified |
| Refresh Cycles | 8192 |
| Seated Height-Max | 1.2 Mm |
| Self Refresh | Yes |
| Sequential Burst Length | 2,4,8 |
| Standby Current-Max | 0.004 A |
| Supply Current-Max | 0.29 Ma |
| Supply Voltage-Max (Vsup) | 2.7 V |
| Supply Voltage-Min (Vsup) | 2.5 V |
| Supply Voltage-Nom (Vsup) | 2.6 V |
| Surface Mount | Yes |
| Technology | Cmos |
| Temperature Grade | Commercial |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | Gull Wing |
| Terminal Pitch | 0.65 Mm |
| Terminal Position | Dual |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Width | 10.16 Mm |
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