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Hot sale Original MMBT5551LT1G Bipolar (BJT) Transistor NPN 160 V 600 mA 225 mW Surface Mount SOT-23-3 (TO-236)

MMBT5551LT1G

Model:MMBT5551LT1G

Manufacturer:Original

Package:SOT23

详情

Product Details


High Voltage Transistors

NPN Silicon

Features

• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant



Product Description


Type

Description

PART#

MMBT5551LT1G

Category

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Single Bipolar Transistors

Mfr

/

Series

-

Packaging

Tape & Reel (TR)

Cut Tape (CT)

Part Status

Active

Transistor Type

NPN

Current - Collector (Ic) (Max)

600 mA

Voltage - Collector Emitter Breakdown (Max)

160 V

Vce Saturation (Max) @ Ib, Ic

200mV @ 5mA, 50mA

Current - Collector Cutoff (Max)

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 10mA, 5V

Power - Max

225 mW

Frequency - Transition

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SOT-23-3 (TO-236)

Base Product Number

MMBT5551

Actual image of the product 

MMBT5551LT1G


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