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Hot sale Original DMHC3025LSD-13 Transistor MOSFET 2N/2P-CH 30V 6A/4.2A 8SO Mosfet Array 30V 6A, 4.2A 1.5W (Ta) Surface Mount

DMHC3025LSD-13

Model:DMHC3025LSD-13

Manufacturer:/

Package:SOP8

详情

Product Description

The DMHC3025LSD-13 is a high-reliability, dual N-channel and P-channel, metal-oxide semiconductor (MOSFET). This 8-pin, surface-mount device (SMD) is designed for switching applications and features a high level of integration, making it an ideal choice for a wide range of applications.

Product Features  

· High-Reliability: The DMHC3025LSD-13 is designed to provide high reliability and is suitable for use in harsh environments.

· Dual N-Channel and P-Channel MOSFETs: The device features two N-channel and two P-channel MOSFETs, allowing for a high level of flexibility in circuit design.

· Logic Level Gate: The device has a logic level gate, making it easy to interface with digital logic circuits.

· High Power Density: The device has a high power density, making it suitable for use in applications where space is limited.

· Low On-Resistance: The device has a low on-resistance, making it suitable for use in applications where power efficiency is important.

Product Applications

· Primary Applications: The DMHC3025LSD-13 is suitable for use in a wide range of applications, including motor control, power supplies, and audio amplifiers.

· Secondary Applications: The device can also be used in other applications such as LED drivers, DC-DC converters, and power management systems.

 


Product Description

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Type

Description

ANSC PART#

ANSC - DMHC3025LSD-13

Category

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

FET, MOSFET Arrays

Manufacturer

-

Series

-

Packaging

Tape & Reel (TR)

Cut Tape (CT)

Part Status

Active

Technology

MOSFET (Metal Oxide)

Configuration

2 N and 2 P-Channel (Full Bridge)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

6A, 4.2A

Rds On (Max) @ Id, Vgs

25mOhm @ 5A, 10V, 50mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11.7nC @ 10V, 11.4nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds