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Original DTC144EUAT106 Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 30 mA 250 MHz 200 mW Surface Mount UMT3

DTC144EUAT106

Model:DTC144EUAT106

Manufacturer:/

Package:SOT323

详情

Product Description

The DTC144EUAT106 is a surface-mount, pre-biased NPN bipolar junction transistor (BJT). This device is designed for use in amplifier applications, offering a built-in bias resistor ratio of 1. With a collector-emitter breakdown voltage of 50V and a collector-emitter voltage of 300mV, this transistor is suitable for a wide range of applications.


Product Features  

Built-in bias resistor ratio of 1

Collector-emitter breakdown voltage of 50V

Collector-emitter voltage of 300mV

Continuous collector current of 30mA

Current cutoff of 500nA

DC current gain (hFE) of 68 at 5mA and 5V

Frequency transition of 250MHz

Power dissipation of 200mW

Operating temperature range of -55°C to 150°C

Surface-mount package with a package size of SC-70, SOT-323



Product Applications

Amplifier applications

General-purpose switching and amplification


Embedded Modules

This component is not typically used as a standalone device, 

but rather as a part of a larger circuit or system.


Product Description

Type

Description

ANSC PART#

ANSC - DTC144EUAT106

Category

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Single, Pre-Biased Bipolar Transistors

Manufacturer

-

Series

-

Packaging

Tape & Reel (TR)

Cut Tape (CT)

Part Status

Active

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

30 mA

Voltage - Collector Emitter Breakdown (Max)

50 V

Resistor - Base (R1)

47 kOhms

Resistor - Emitter Base (R2)

47 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

68 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

250 MHz

Power - Max

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