Hot sale Original NVMFD5877NLT1G Transistors Mosfet Array 60V 6A 3.2W Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)_电子元器件

Description

The NVMFD5877NLT1G is a dual N-channel metal-oxide semiconductor (MOS) field-effect transistor (FET) array. This device is designed for switching applications and features a logic-level gate, making it suitable for use in a variety of electronic systems. With a maximum power dissipation of 3.2W and a maximum current of 17A, this FET array is capable of handling high-power and high-current applications.

Product Features

Dual N-channel MOSFET array

Logic-level gate for easy integration with logic circuits

High-power dissipation of 3.2W

High-current capability of 17A

Operating temperature range of -55°C to 175°C

Surface-mount package with a 8-PowerTDFN footprint

Lead-free and halogen-free construction

Compliant with RoHS3 and JESD-30 and JESD-609 standards

Product Applications

Switching applications in power supplies, motor control, and industrial automation systems

High-power and high-current applications in automotive, aerospace, and military systems

Logic-level gate applications in digital circuits, such as logic gates and buffers

Product Description

Type	Description
ANSC PART#	ANSC- NVMFD5877NLT1G
Category	Discrete Semiconductor Products
	Transistors
	FETs, MOSFETs
	FET, MOSFET Arrays
Manufacturer	-
Series	-
Packaging	Tape & Reel (TR)
Part Status	Obsolete
Technology	MOSFET (Metal Oxide)
Configuration	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	6A
Rds On (Max) @ Id, Vgs	39mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	540pF @ 25V
Power - Max	3.2W
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	Automotive
Qualification	AEC-Q101
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Supplier Device Package	8-DFN (5x6) Dual Flag (SO8FL-Dual)
Base Product Number	NVMFD5877