Product details
Brief Description: The NX1029X,115 is a dual-channel logic-level gate N and P-channel MOSFET . It is designed for surface-mount applications and is suitable for use in automotive and other harsh environments.
Product Features
Dual-channel N and P-channel MOSFET array
Logic-level gate
Continuous drain current (ID) up to 170mA
Drain-to-source breakdown voltage of -50V
Drain-to-source voltage (Vdss) of 60V and 50V
Fall time (typ) of 25ns
Gate charge (Qg) of 0.35nC at 5V
Gate-to-source voltage (Vgs) of 20V
Input capacitance (Ciss) of 36pF at 25V
Maximum power dissipation of 500mW
Operating temperature range of -55°C to 150°C (TJ)
RoHS3 compliant
AEC-Q101 and TrenchMOS? certified for automotive applications
Application Grade: The NX1029X,115 is designed for use in automotive and
other harsh environments, making it suitable for applications such as:
· Power management and control
· Motor control
· Power conversion and conditioning
· Automotive electronics
Product Applications
Automotive power management and control systems
Industrial motor control and power conversion systems
Power supplies and converters
Automotive infotainment and telematics systems
Industrial automation and control systems
Product Description
Type | Description |
|---|---|
ANSC PART# | ANSC - NX1029X,115 |
Category | Discrete Semiconductor Products Transistors FETs, MOSFETs FET, MOSFET Arrays |
Manufacturer | - |
Series | TrenchMOS™ |
Packaging | Tape & Reel (TR) Cut Tape (CT) |
Part Status | Not For New Designs |
Technology | MOSFET (Metal Oxide) |
Configuration | N and P-Channel |
