Description
breakthrough MDmeshTM technology, which combines the multiple drain process with the company's PowerMESHTM horizontal layout, was used to manufacture STF11NM80 MOSFETs. These devices have a very low on-resistance, a very high dv/dt, and good avalanche properties. These Power MOSFETs have an overall dynamic performance that is superior to similar items on the market because to ST's proprietary strip process.
Product Features
Gate charge and input capacitance are both low.
Input gate resistance is low.
The industry's best RDS(on)*Qg
Product Applications
Switching applications
Product Description
Type | Description |
|---|---|
ANSC PART# | ANSC - STF11NM80 |
Category | Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
Mfr | / |
Series | MDmesh™ |
Packaging | Tube |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800 V |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 400mOhm @ 5.5A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 43.6 nC @ 10 V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 1630 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 35W (Tc) |
Operating Temperature | -65°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220FP |
Package / Case | TO-220-3 Full Pack |
Base Product Number | STF11 |
Actual image of the product
