Product Description

The MB85R4M2TFN-G-JAE2 is a 4Mb FRAM (Ferroelectric Random Access Memory) integrated circuit designed for a wide range of applications. This non-volatile memory device features a 256K x 16 memory array and operates within a temperature range of -40°C to 85°C.

Product Features  

· 4Mb FRAM memory with 256K x 16 memory array

· Non-volatile memory technology for data retention

· Operating voltage range of 1.8V to 3.6V

· Write cycle time of 150ns for word and page operations

· Surface mount package with a 44-TSOP footprint

· RoHS compliant and manufactured with a moisture sensitivity level of 3 (168 hours)

Product Applications

· Primary applications: Industrial automation, medical devices, and automotive systems where data retention and low power consumption are critical.

· Secondary applications: Consumer electronics, IoT devices, and wearable technology where non-volatile memory is required.

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