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Hot-selling and scarce MT48LC16M8A2BB-75 IT:G SDRAM Memory IC 128Mbit Parallel 133 MHz 5.4 ns 60-FBGA

MT48LC16M8A2BB-75 IT:G

Model:MT48LC16M8A2BB-75 IT:G

Manufacturer:/

Package:60-FBGA

详情

Product Descriptions


The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432-bit banks is organized as 4096 rows by 2048 columns by 4 bits. Each of the x8’s 33,554,432-bit banks is organized as 4096 rows by 1024 columns by 8 bits. Each of the x16’s 33,554,432-bit banks is organized as 4096 rows by 512 columns by 16 bits.


Read and write accesses to the SDRAM are burst-oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an ACTIVE command, which is then followed by a READ or WRITE command. The address bits registered coincident with the ACTIVE command are used to select the bank and row to be accessed (BA[1:0] select the bank; A[11:0] select the row). The address bits registered coincident with the READ or WRITE command are used to select the starting column location for the burst access.


The SDRAM provides for programmable read or write burst lengths (BL) of 1, 2, 4, or 8 locations, or the full page, with a burst terminate option. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence.


Product Features


• PC100- and PC133-compliant

• Fully synchronous; all signals registered on positive edge of system clock

• Internal, pipelined operation; column address can be changed every clock cycle

• Internal banks for hiding row access/precharge

• Programmable burst lengths (BL): 1, 2, 4, 8, or full page

• Auto precharge, includes concurrent auto precharge and auto refresh modes

• Self refresh modes: Standard and low power (not available on AT devices)

• Auto Refresh

– 64ms, 4096-cycle refresh (commercial and industrial)

– 16ms, 4096-cycle refresh (automotive)

• LVTTL-compatible inputs and outputs

• Single 3.3V ±0.3V power supply


Product Specification


AttributeAttribute value
ANSM-Part#ANSM-MT48LC16M8A2BB-75 IT:G
CategoryIntegrated Circuits (ICs)
Memory
Memory
Mfr-
PackagingTray
Part StatusObsolete
DigiKey ProgrammableNot Verified
Memory TypeVolatile
Memory FormatDRAM
TechnologySDRAM
Memory Size128Mbit
Memory Organization16M x 8
Memory InterfaceParallel
Clock Frequency133 MHz
Write Cycle Time - Word, Page15ns
Access Time5.4 ns
Voltage - Supply3V ~ 3.6V
Operating Temperature-40°C ~ 85°C (TA)
Mounting TypeSurface Mount
Package / Case60-FBGA
Supplier Device Package60-FBGA (8x16)
Base Product NumberMT48LC16M8A2


Product Photos


MT48LC16M8A2BB-75 IT G


For more product information, please download the PDF


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