Product Details
Surface Mount Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system.
Features
• Small Compact Surface Mountable Package with J−Bend Leads
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• Very Low Forward Voltage Drop (0.55 Volts Max @ 1.0 A, TJ = 25C)
• Excellent Ability to Withstand Reverse Avalanche Energy Transients
• Guard−Ring for Stress Protection
• ESD Ratings:
♦ Human Body Model = 3B (> 16000 V)
♦ Machine Model = C (> 400 V)
• AEC−Q101 Qualified and PPAP Capable
• SBRS8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
• All Packages are Pb−Free*
Product Description
Type | Description |
|---|---|
| PART# | MBRS120T3G |
Category | Discrete Semiconductor Products Diodes Rectifiers Single Diodes |
Mfr | / |
Series | - |
Packaging | Tape & Reel (TR) Cut Tape (CT) |
Part Status | Active |
Technology | Schottky |
Voltage - DC Reverse (Vr) (Max) | 20 V |
Current - Average Rectified (Io) | 1A |
Voltage - Forward (Vf) (Max) @ If | 600 mV @ 1 A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr | 1 mA @ 20 V |
Capacitance @ Vr, F | - |
Mounting Type | Surface Mount |
Package / Case | DO-214AA, SMB |
Supplier Device Package | SMB |
Operating Temperature - Junction | -65°C ~ 125°C |
Base Product Number | MBRS120 |
Actual image of the product
