Product Details
| DESCRIPTION Third generation power MOSFETs from provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • P-channel • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements |
Product Description
| Type# | Description |
| ANSC PART# | ANSC -IRF9530 |
| Ihs Manufacturer | Original |
| Case Connection | DRAIN |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min | 100 V |
| Drain Current-Max (ID) | 12 A |
| Drain-source On Resistance-Max | 0.3 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 175 °C |
| Operating Temperature-Min | -55 °C |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | 225 |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation Ambient-Max | 88 W |
| Power Dissipation-Max (Abs) | 88 W |
| Pulsed Drain Current-Max (IDM) | 48 A |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Finish | TIN LEAD |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
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