Product Details
| Description The MMBT3904LT1G is a general-purpose NPN silicon bipolar transistor with linear and switching capabilities. It comes in the SOT-23 package, which is intended for low-power surface mount applications. The MMBT3904LT1G can be utilized in circuits that require high current density and a wide voltage range. The maximum emitter-base voltage of the MMBT3904LT1G is 6 V. It can dissipate up to 300 mW of power. Features Package Type: SOT−23 (TO−236) Transistor Type: NPN Max Collector Current(IC): 200 mA Max Collector-Emitter Voltage (VCEO): 40 V Max Collector-Base Voltage (VCBO): 60 V Max Emitter-Base Voltage (VEBO): 6 V Max Power Dissipation (PD): 300 mW Max Transition Frequency (fT): 300 MHz DC Current Gain (hFE): 100 - 300 Storage & Operating temperature: -55 to +150 Centigrade Applications General Purpose Switching Signal Processing Industrial Automotive |
Product Description
| Type | Description |
| ANSC PART# | MMBT3904LT1G |
| Category | Discrete Semiconductor Products |
| Transistors | |
| Bipolar (BJT) | |
| Single Bipolar Transistors | |
| Mfr | Original |
| Series | - |
| Packaging | Tape & Reel (TR) |
| Cut Tape (CT) | |
| / | |
| Part Status | Active |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 1V |
| Power - Max | 300 mW |
| Frequency - Transition | 300MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Base Product Number | MMBT3904 |
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