Product Descriptions
The device in a PNP transistor manufactured using new “PB-HDC” (Power Bipolar High Density Current) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
The complementary NPN is the 2STF1340.
Product Features
■ Very low collector-emitter saturation voltage
■ High current gain characteristic
■ Fast switching speed
■ SOT-89 plastic package for surface mounting circuits
Product Applications
■ LED
■ Motherboard & hard disk drive
■ Mobile equipment
■ Battery charger
■ Voltage regulation
Product Specifications
| Attribute | Attribute value |
| ANSM-Part# | ANSM-2STF2340 |
| Category | Discrete Semiconductor Products |
| Transistors | |
| Bipolar (BJT) | |
| Single Bipolar Transistors | |
| Mfr | - |
| Series | - |
| Packaging | Tape & Reel (TR) |
| Part Status | Obsolete |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Vce Saturation (Max) @ Ib, Ic | 350mV @ 150mA, 3A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 1A, 2V |
| Power - Max | 1.4 W |
| Frequency - Transition | 100MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Supplier Device Package | SOT-89-3 |
| Base Product Number | 2STF23 |
Product Photos
For more product information, please download the PDF
